metal sillicon junction majority carrier conduction high current capability,low forward voltage drop extremely low reverse current i r ultra speed switching characteristics case:jedec do--35,glass case weight: approx. 0.13 gram v rrm v forw ard continuous current i f ma i fsm ma t stg /t j t l min. typ. max. small temperature coefficient of forward fffff f characteristics voltage range: 45 v current: 0.1 a do - 35(glass) pf % ns /w 60.0 r ja reverse recovery time thermal resis tance junction to ambient electrical characteristics parameters units a 0.5 1.0 1.0 v r =15v detection efficiency (see fig. 4) t rr reverse current junction capacitance i r c j for use in recorder. tv. radio. telephone satisfactory wave detection efficiency s m all current rectifier symbols parameters absolute ratings(limiting values) units value polarity: color band denotes cathode end as detectors,super high speed switching circuits, v forw ard voltage i f =1ma v f 0.24 45 test conditions value repetitive peak reverse voltage peak forw ard surge current (t =1s) t a =25 storage and junction temperature range i f =i r =1ma irr=1ma r c =100 i f =200ma 1N60P 500 xx - 55 ---- + 125 230 maximum lead temperature for soldering during 10s at 4mm from case symbols 50 0.65 0.5 v r =10v f=1mhz v l =3v f=30mhz c l =10pf r l =3.8k 1.0 6.0 400 dimensions in millimeters 1N60P small signal schottky diodes features m echani cal d ata http://www.luguang.cn mail:lge@luguang.cn
a 0 0.20 0.40 0.60 0 5 10 15 20 30 v r v 25 i r 0.50 0.30 0.10 0.70 fi g. 3 -- juncti on capaci tance versus conti nuous reverse applied voltage fi g. 4 -- detection effi ci ency measurement circui t fi g. 1 -- forward current versus forward voltage (typi cal values) fi g. 2 -- reverse current versus continuous reverse voltage d. u.t input:3v rms cl 10 p f output rl 3.8k i f 0 0.2 0.4 0.6 0.8 1.0 v f ma v 250 300 350 400 450 500 200 150 100 50 0 1N60P small signal schottky diodes ratings and charactieristic curves http://www.luguang.cn mail:lge@luguang.cn
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